xans/3458A-RepairArticle
1
0
Fork 0
Code Issues Pull Requests Packages Projects Releases Wiki Activity

Update readme.md

Browse Source
This commit is contained in:
xans 2024-10-03 00:51:12 +02:00
parent c8020de1c1
commit e953f0900d
1 changed files with 1 additions and 1 deletions
Show Stats Download Patch File Download Diff File Expand all files Collapse all files

2
readme.md
View File

@ -65,7 +65,7 @@ In terms of the [infamous service note 18](3458-WorkLog/Sn18A.pdf) this meter pa
## Improving
If one looks at semiconductor ageing there are a few things we can do to improve the stability in the long term.
Firstly, it is possible to lower the current passing trough the reference devices on the die, this in turn will decrease the drift experienced from electromigration. This is the movement of material caused by electons bumping into them. Thus this could be lessened by decreasing the amount of electrons troughout the device by decreasing the amount of current. This coming at the tradeoff of extra noise.
Firstly, it is possible to lower the current passing trough the reference devices on the die, this in turn will decrease the drift experienced from electromigration. This is the movement of material atoms caused by electons bumping into them. Thus this could be lessened by decreasing the amount of electrons troughout the device by decreasing the amount of current. This coming at the tradeoff of extra noise.
Secondly and majorly is chemical reactions over time, though stable a chip still exists upon a mixure of chemicals all slowly reacting on oneother. Thus [Arherrius' equation](https://en.wikipedia.org/wiki/Arrhenius_equation) comes into play, where reaction rates increase as temperature rises. Emperically this has been tested to double the drift for every 10degreesC.